| PART |
Description |
Maker |
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W986432DH |
SDRAM 2Mx32
512K ′ 4 BANKS ′ 32 BITS SDRAM
|
Winbond Electronics
|
| W9816G6CB W9816G6CB-6 W9816G6CB-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
| W9864G2JH |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| IC42S16101-6T |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solu...
|
| IC42S16102-6T IC42S16102-7T IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Advanced Interconnections, Corp.
|
| W9816G6IH10 W9816G6IH-6I |
512K × 2 BANKS × 16 BITS SDRAM
1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
|
WINBOND ELECTRONICS CORP
|
| KM432S2030C KM432S2030CT-F10 KM432S2030CT-F6 KM432 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W9864G2GH-6I W9864G2GH-6C |
512K X 4 BANKS X 32BITS SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics, Corp.
|
| W9816G6JH-5 W9816G6JH-6 W9816G6JH-5-TR W9816G6JH-6 |
512K X 2 BANKS X 16 BITS SDRAM
512K X 2 BANKS X 16 BITS SDRAM
|
Winbond
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
